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Figure 1 | Nanoscale Research Letters

Figure 1

From: High Mg effective incorporation in Al-rich Al x Ga1 - xN by periodic repetition of ultimate V/III ratio conditions

Figure 1

Formation enthalpies of Mg Ga /Mg Al and normalized C Mg cprofile of AlGaN films. (a) In the bulk and (b) on the surface of Al x Ga1 - x N as a function of Al content under N-rich condition. (c) Normalized CMg of Al x Ga1 - x N (x = 0.33, 0.54) epilayers from the surface to bulk. The inset in (a) shows the calculated Al x Ga1 - x N lattice constants a and c as a function of Al content. The inset in (c) illustrates the source supply sequence of the conventional method.

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