Figure 1

Band bending at the metal/p-type Si interface for (a) Ag, (b) Au, (c) Pt, and (d) Pd. E_vac = the vacuum energy. Φ_M = metal work function. Φ_Si = Si work function. E _g = Si band gap. E _F = Fermi energy. E _C = Si conduction band energy. E _V = Si valence band energy. Φ_D = maximum band bending. The value E indicates the energy of the Si valence band directly at the metal/Si interface. $E_{b,p}^{\mathrm{ideal}}$ is the Schottky barrier height from Equation 4.