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Figure 2 | Nanoscale Research Letters

Figure 2

From: High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Figure 2

Conduction band, electron density, and electric field distribution versus depth plots. (a) Calculated conduction band profiles of all devices under the neutral bias condition. (b) Distribution of three-dimensional electron density (Ne) in a semi-log scale for all devices. (c) Corresponding electric field distributed over all devices. The dotted-line rectangle marks the region where the 2-DEG channel belongs.

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