Figure 2From: Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopyEnergy band diagram of non-polar (a) GaN/AlN and (b) AlN/GaN heterojunctions. Apparent valence-band offsets without (the solid lines) and with (the dashed lines) a strain-induced piezoelectric field in the heterojunction overlayers.Back to article page