Account

Table 1 Binding energies (in eV) of the XPS peaks and VBM for GaN, AlN, GaN/AlN, and AlN/GaN samples

From: Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

Sample	State	Binding energy(eV)
GaN	Ga 3d	19.70 ± 0.03	Ga-N
		20.70 ± 0.03	N2s
	VBM	2.06 ± 0.03
AlN	Al 2p	73.85 ± 0.01	Al-N
		75.05 ± 0.01	Al-O
	VBM	2.74 ± 0.09
GaN/AlN	Al 2p	73.36 ± 0.01	Al-N
	Ga 3d	18.56 ± 0.03	Ga-N
	Ga 3d	19.96 ± 0.03	N2s
AlN/GaN	Al 2p	73.43 ± 0.01	Al-N
	Al 2p	74.63 ± 0.01	Al-O
	Ga 3d	19.23 ± 0.03	Ga-N
	Ga 3d	20.23 ± 0.03	N2s

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