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Table 1 Binding energies (in eV) of the XPS peaks and VBM for GaN, AlN, GaN/AlN, and AlN/GaN samples

From: Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

Sample State Binding energy(eV)  
GaN Ga 3d 19.70 ± 0.03 Ga-N
  20.70 ± 0.03 N2s
VBM 2.06 ± 0.03  
AlN Al 2p 73.85 ± 0.01 Al-N
  75.05 ± 0.01 Al-O
VBM 2.74 ± 0.09  
GaN/AlN Al 2p 73.36 ± 0.01 Al-N
Ga 3d 18.56 ± 0.03 Ga-N
19.96 ± 0.03 N2s
AlN/GaN Al 2p 73.43 ± 0.01 Al-N
74.63 ± 0.01 Al-O
Ga 3d 19.23 ± 0.03 Ga-N
20.23 ± 0.03 N2s