Figure 1
From: Electronic properties of core-shell nanowire resonant tunneling diodes
CB profile, sub-band energies and wave functions and variation of energy sub-band versus thickness. (a) CB profile, sub-band energies and wave functions for m = 0 in a 10-nm InAs/10 nm InP/8 nm InAs/10 nm InP/10 nm InAs core-shell NW and (b) for m = 1 in the same core-shell NW of (a). (c) Variation of the lowest m = 0, n = 1 and m = 1, n = 1 sub-band energies versus thickness of the middle InAs shell shown in (a) or (b).