Figure 3
From: Design parameters for enhanced photon absorption in vertically aligned silicon nanowire arrays
Short circuit current density characteristics depending on NW diameter (cylindrical shape) and length. At 250 nm constant pitch showing the tradeoff between NW surface reflection and material volume in comparison to silicon membrane material. Inset: exemplary electric field distribution inside a NW array for light of 800 nm wavelength (blue represents the lowest and red the highest electric field). Short circuit current density values are plotted for corresponding Si membrane thicknesses.