Figure 7
Simulated linear output characteristic of a dual nanowire ZnO FET. With a contact resistance of 11.4 MΩ (red curve) and, for comparison, a measured characteristic for a ZnO layer deposited at 190° C (dashed black curve). VD = 1 V. The blue curve shows a simulated characteristic for a contact resistance of 10 Ω for de-embedding the value of field-effect mobility.