Figure 6From: A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memoryEnergy band diagram in the retention state of the single poly-Si JL-FinFET GAA NVM. (a) The conventional FG memory devices. Band diagram of retention state for operation voltage (b) lower than 23 V for 1 s and (c) larger than 23 V for 1 s.Back to article page