Figure 5
From: Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping
Transfer characteristics and I ds - V ds curves of DAL TFTs with varying HECL length. (a) Transfer characteristics and (b) Ids-Vds curves of DAL TFTs with varying HECL length. On-current increased monotonically as the HECL length increased within the same channel. The inset figure is the linear scale curve. This observation confirmed that superior electrical properties are obtained with an increase in the on-current and no change in the off-current, as a semiconducting gap with a width of 10 μm exists between source/drain and HECL.