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Figure 1 | Nanoscale Research Letters

Figure 1

From: Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

Figure 1

SEM images of GaAs NWs on (100) silicon substrate with different growth temperatures. (a) 600°C, (b) 630°C, (c) 650°C, (d) 670°C, (e) close-up view of a GaAs NW core, and (f) EDX spectra taken at the middle [B] and top [A] of a GaAs NW core (see Figure 1e). The inset of Figure 1e shows the clear formation of a hexagonally shaped NW.

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