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Figure 2 | Nanoscale Research Letters

Figure 2

From: Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

Figure 2

Cross-sectional schematic of the NW to be grown, band diagram, and the inclined NW growth. (a) Cross-sectional schematic of the NW to be grown. The center region represents the core made of GaAs surrounded by GaInAs shell with AlGaAs layer as the outermost clad layer, (b) band diagram of the NW along the dotted line of Figure 2a, and (c) schematic showing the inclined NW growth.

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