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Figure 3 | Nanoscale Research Letters

Figure 3

From: Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

Figure 3

BF TEM, HRTEM, and HAADF STEM images of GaAs/GaInAs core-shell nanowire and spot EDX data. (a) BF TEM image of a GaAs/GaInAs core-shell nanowire (GaInAs/GaAs/AlGaAs on GaAs core NW) and (b) HRTEM image of the GaInAs layer from the boxed area of the nanowire in Figure 3a. The insets are the FFT patterns from the ZB and WZ structures. (c) HAADF STEM image of the same area of the nanowire shown in Figure 3a. The white line shown in the box represents the region along which the spot EDX was measured. (d) Spot EDX data revealing the atomic weight percentage of the constituent elements of the GaInAs layer of the nanowire shown in Figure 3c. Inset shows the cross-sectional schematic of the nanowire structure shown in Figure 3a. The arrow shown in the inset indicates the layer from which spot EDX is taken.

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