Figure 3From: Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface trapsFluctuated V th for the studied devices with different D it levels. The line indicates the threshold voltage of a fresh sample. (a, c) n-/p-type bulk FinFET and (b, d) n-/p-type planar MOSFET devices.Back to article page