Figure 7From: Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayersExternal quantum efficiency of solar cells. (a) The EQE results of p-i-n device structures containing as-deposited (blue line) and 900°C annealed (red line) Si/SiC MLs. (b) The EQE results of p-i-n solar cell containing Si QDs/SiC MLs by subtracting the EQE of cell containing as-deposited one.Back to article page