Figure 3From: One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices applicationSEM image of MOSFET device, I ds -V ds curves, and characteristics of the nanoFETs. (a) SEM image of the CuO NW MOSFET device, the inset shows the magnified image; (b) I ds -V ds curves at different gating voltages. (c) Transfer characteristics of the nanoFET at V ds = 2 V. (d) Hole mobility and concentration of ten representative nanoFETs.Back to article page