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Figure 1 | Nanoscale Research Letters

Figure 1

From: Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

Figure 1

Characteristics of the RRAM device and the transistor. (a) The schematic of 1T1R structure. (b) Typical I-V curves of the Cu/HfO2/Pt device in set and reset cycles. The reset points have been notated by Vreset and Ireset. (c) The transfer curve of the N+ transistor. The intrinsic parameters of the transistor (including WunCox/2 L and VT) are abstracted from the slope and the intercept of the fitting line, so the soure-drain resistance is obtained from calculation.

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