Figure 1

Characteristics of the RRAM device and the transistor. (a) The schematic of 1T1R structure. (b) Typical I-V curves of the Cu/HfO₂/Pt device in set and reset cycles. The reset points have been notated by V_reset and I_reset. (c) The transfer curve of the N⁺ transistor. The intrinsic parameters of the transistor (including Wu_nC_ox/2 L and V_T) are abstracted from the slope and the intercept of the fitting line, so the soure-drain resistance is obtained from calculation.