Figure 6From: Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etchingPL properties of Si/Ge NWs as a function of temperature. (a) PL spectra in the IR region of Si/Ge NWs from 11 K to room temperature. (b) PL time-decay curves measured at 1,220 nm and at temperatures in the 11- to 80-K range. All measurements were performed with a photon flux of 3.1 × 1020 cm−2 · s−1.Back to article page