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Figure 7 | Nanoscale Research Letters

Figure 7

From: Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Figure 7

RDF stimulation result and magnitudes of σV th , σ DIBL, and σ SS. (a) The RDF simulation result of bulk FinFET devices with respect to different fin angles. The magnitude of σV th is getting larger when the fin angle is getting smaller. (b) The magnitude of σDIBL versus the fin angle. The magnitude of σDIBL increases when the fin angle decreases owing to the wider bottom-fin width. (c) The magnitude of σSS versus the fin angle.

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