Figure 11
From: Physical and chemical mechanisms in oxide-based resistance random access memory
Bipolar switching behavior, current-time sampling, and Ln( Q )-time fitting curves for −0.9 and −1.2 V. (a) The typical bipolar switching behavior and the metal-insulator-metal (MIM) device structure and (b) the current-time sampling points of the Ni:SiO2 thin film RRAM device. (c) The Ln(Q)-time fitting curve for −0.9 V constant sampling voltage condition. (d) The Ln(Q)-time fitting curve for −1.2 V constant sampling voltage condition.