Figure 2From: Axially connected nanowire core-shell p-n junctions: a composite structure for high-efficiency solar cells The fabrication process of the proposed structure. After growing the tunnel diode and GaInP core nanowire, we mask the device by SiO2, and then the SiO2 mask is etched to the position which is a little higher than where the tunnel diode lies, in order to isolate GaInP shell from the tunnel diode in electrics.Back to article page