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Figure 2 | Nanoscale Research Letters

Figure 2

From: High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

Figure 2

The calculated (002) 2θ/ω XDPs for GaN NWs. (a) The influence of the deformation magnitude (\( {\varepsilon}_o^{\left|\right|} \)) at the NW/substrate interface. (b) The influence of the deformation relaxation depth (L R ). The insets show the deformation profiles (defined by Equation 3) used for the calculation. The dashed line in (a) shows the XDP determined only by the size effect (without deformation).

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