Figure 1From: Influence of post-annealing on the off current of MoS2 field-effect transistors Schematic representation of MoS 2 FET and AFM image. (a) Schematic representation of MoS2 FET with highly doped silicon as the back gate and (b) atomic force microscopy (AFM) height profile of multilayer MoS2 that has a thickness of 11 nm. The inset is the corresponding AFM image.Back to article page