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Table 2 Electrical interface parameters

From: Oxidation precursor dependence of atomic layer deposited Al₂O₃ films in a-Si:H(i)/Al₂O₃ surface passivation stacks

		PE-SA-1	PE-SA-2	T-SA-1
Before deposition^a	Q _tot (cm⁻²)	−9.23 × 10¹¹	−7.70 × 10¹¹	−9.93 × 10¹¹
Before deposition^a	V _SB (V)	−0.177	−0.134	−0.169
After deposition	Q _tot (cm⁻²)	−8.93 × 10¹²	−5.64 × 10¹²	−1.38 × 10¹²
After deposition	V _SB (V)	−0.546	−0.499	−0.192

^aThe samples before deposition refer to the samples only covered by a-Si:H films. The samples after deposition were annealed at 450°C for 10 min in air.

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