Figure 1From: AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique Schematic cross section and dimensions of the HEMTs. (a) Without AlN gate insulator and (b) with AlN gate insulator. These devices are with source-gate spacing L GS of 1 μm, gate length L G of 2.5 μm, drain-gate spacing L GD of 6 μm, and gate width of 60 μm.Back to article page