Figure 8From: AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique Relationship between breakdown voltage and gate-drain spacing L GD . Inset: three-terminal off-state breakdown characteristics of an AlN-MISHEMT with L GS = 1 μm, L G = 2.5 μm, and L GD = 10 μm at V GS = −7 V.Back to article page