Figure 1
Introduction for four kinds of structure of rear-side passivation films. (a) Cell A has a pure Al2O3 film on the rear side of the Si wafer; (b) cell B has a thin SiO2 film inserted between the Al2O3 film and Si wafer; (c) cell C has the same stacked structure to that of cell B, but thinner Al2O3 film of 8 nm; and (d) cell D has a triple-layer stacked passivation film of SiO2/Al2O3/SiNx:H. We introduce the detailed information about the passivation films fabricated in various stages.