Figure 6From: Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system Injection level dependent minority carrier lifetime for the stacked passivation film. Si/3 nm-SiO2/8 nm-Al2O3/70 nm-SiNx:H film and Si/3 nm-SiO2/6 nm-Al2O3/70 nm-SiNx:H film.Back to article page