Table 1 Detailed thickness information of rear-side passivation films
Cell type | SiO 2 (nm) | Al 2 O 3 (nm) | SiN x :H (nm) | Annealing temperature prior to cap SiN x :H (°C) |
|---|---|---|---|---|
A | N/A | 25 | N/A | 500 |
B | 3 | 25 | N/A | 500 |
C | 3 | 8 | N/A | 650 |
D | 3 | 8 | 70 | 650 |
Cell type | SiO 2 (nm) | Al 2 O 3 (nm) | SiN x :H (nm) | Annealing temperature prior to cap SiN x :H (°C) |
|---|---|---|---|---|
A | N/A | 25 | N/A | 500 |
B | 3 | 25 | N/A | 500 |
C | 3 | 8 | N/A | 650 |
D | 3 | 8 | 70 | 650 |