Figure 3From: Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices Cross-sectional HRTEM and IFFT-filtered images. (a) Cross-sectional HRTEM image of the interface (the magnified image of the boxed area in Figure 2a). (b) IFFT-filtered image of the red dashed box of (a) using ZnO (−12-10) and (1–210) reflections and sapphire (0006) and (000–6) reflections.Back to article page