Figure 1From: Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell The QD TJSC image. (a) The structure of QD TJSC, QD structure of (b) sample A1 with Ga0.90In0.10As SRL, (c) sample A2 without Ga0.90In0.10As SRL.Back to article page