Figure 6From: Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell The I-V measurements and dark I-V curves. (a) I-V measurements at 1,000 suns AM 1.5D of QD TJSC with and without Ga0.90In0.10As SRL, (b) dark I-V curves and the corresponding ideality factor of QD TJSC with and without Ga0.90In0.10As SRL.Back to article page