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Table 1 The open-circuit voltage (V oc ), fill factor (FF), short-circuit current (I sc ), and conversion efficiency (η) of QD TJSC

From: Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

No.

I sc (A)

V oc (V)

FF(%)

η(%)

Sample B1

12.79

3.17

83.69

33.91

Sample B2

12.45

3.20

84.01

33.51

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