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Table 1 The open-circuit voltage (V oc ), fill factor (FF), short-circuit current (I sc ), and conversion efficiency (η) of QD TJSC

From: Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

No. I sc (A) V oc (V) FF(%) η(%)
Sample B1 12.79 3.17 83.69 33.91
Sample B2 12.45 3.20 84.01 33.51