Figure 10From: Conductive-bridging random access memory: challenges and opportunity for 3D architecture I-V hysteresis for Ge0.2Se0.8 and LRS/HRS vs CCs. (a) I-V hysteresis at a CC of 1 nA for a Ge0.2Se0.8 solid electrolyte. (b) LRS/HRS vs CCs for lower and higher Ge contents of the Ge x Se1 − x solid electrolytes.Back to article page