Figure 6

I-V hysteresis for a Cu/Ge_0.3Se_0.7/W memory device and typical P/E cycles of a Cu/Ge_0.2Se_0.8/W memory device. (a) I-V hysteresis of more than 100 consecutive DC cycles for a Cu/Ge_0.3Se_0.7/W memory device. The size of the memory device is 4 × 4 μm². (b) Typical P/E cycles of a Cu/Ge_0.2Se_0.8/W memory device. Every P/E cycle was recorded. This suggests that the P/E cycles are more than 10⁵.