The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition

Table 2 Samples with different La/Al precursor pulse ratios

Sample	Order and cycles for as-deposited films	Thickness (nm)
A	(Al₂O₃/La₂O₃)50+ (Al₂O₃)5	10.469
B	(Al₂O₃/2La₂O₃)35+ (Al₂O₃)*5	10.757
C	Al₂O₃/3La₂O₃)27+ (Al₂O₃)*5	8.895
D	(La₂O₃)121+ (Al₂O₃)5	8.850