Fig. 1From: Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxideFabricated memory devices; a TEM cross-section of the memory with graphene nanoplatelets. b Cross-section illustration of the fabricated memory cells with graphene nanoplatelets. The memory with Si nanoparticles has the same cross-section illustrationBack to article page