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Table 1 The experimental values of the parameters obtained from I–V fittings

From: Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Type of diode Ideality factor Reverse saturation current (A/cm2) Series resistance (Ω) Parallel conductances (1/Ω)
NiSi/Si 4.701 1.583E−4 6.132 0
NiSi/SiC 3.487 6.125E−8 4.772 8.306E−4