Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Table 1 The experimental values of the parameters obtained from I–V fittings

Type of diode	Ideality factor	Reverse saturation current (A/cm²)	Series resistance (Ω)	Parallel conductances (1/Ω)
NiSi/Si	4.701	1.583E−4	6.132	0
NiSi/SiC	3.487	6.125E−8	4.772	8.306E−4