Fig. 2From: Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires a PL of as-grown β-Ga2O3 NWs at 300 K and β-Ga2O3/Ga2S3 NWs obtained under H2S at 400, 500, and 600 °C using λ E = 266 nm; inset shows the temperature-dependent PL of the as-grown β-Ga2O3 NWs, whereas b and its inset shows temperature-dependent PL of the β-Ga2O3/Ga2S3 NWs at 500 and 400 °C, respectivelyBack to article page