Fig. 2From: Fabrication of Straight Silicon Nanowires and Their Conductive PropertiesSEM images of Si NW growth at different temperatures in different annealing gases. a, b Si NWs formed in 5 % H2 forming gas at 1200 and 1250 °C, respectively. The NWs annealed in 10 % H2 forming gas at c 1200 °C, d 1250 °C, and e 1300 °C. f The NWs in e after 2 min HF etchingBack to article page