Fig. 4
From: Bi-Assisted CdTe/CdS Hierarchical Nanostructure Growth for Photoconductive Applications
Photoresponse characteristics of devices based on a single CdTe NW or CdTe/CdS hierarchical nanostructures. a I-V characteristics of a photodetector based on a single CdTe NW with (red) or without (black) white light illumination. b Single modulation cycle of the photodetector based on CdTe NW exposed to a white light of 100 mW/cm2 at a bias voltage of 1 V. c I-V characteristics of a photodetector based on CdTe/CdS hierarchical nanostructures with (red) or without (black) a white light illumination. d Relative responsivity of a photodetector based on CdTe/CdS hierarchical nanostructures. The inset shows the spectral response of the CdTe/CdS hierarchical nanostructure device measured at a bias voltage of 1 V