Fig. 2From: Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect TransistorsThe tunneling current as a function of the channel electric field with the oxide thickness of 10 nm. The electronic mobility is 20,000 cm2 V−1 s−1, the oxide field is 5 MV/cm, the energy relaxation time is 1 ps, and the device temperature is 300 KBack to article page