Fig. 4From: CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single MaskSEM images of the fabrication of periodic silicon nanotrench arrays with 40 nm line width and 40-nm spacing. a Arrays of α-Si mask nanotrench are patterned by a precise pattern transfer in ICP etcher by Cl2/HBr/O2 plasma chemistry. b SiO2 nanotrench arrays fabricated show a highly uniform and vertical etched profile. c Top view of (b) showing a highly smooth sidewallsBack to article page