Fig. 2

PC spectra as a function of applied reverse bias and an EL spectrum at a current density of 1.4 kA cm⁻² for hybrid QW/QD samples measured normal to the surface of an optical access mesa diode at room temperature. The inset shows the modeling results of the band structure for a single InGaAs quantum well. The QW energy levels were calculated using an effective mass approximation method. This model included temperature- and strain-dependent effects and standard material parameters. A single 7-nm 34 % InGaAs QW was simulated clad with GaAs barriers on either side. An electric field of 10 kV cm⁻¹ was also applied to the simulation structure