Fig. 5
From: Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
Single-electron tunneling operation of single-dopant transistors at elevated temperatures. a Stub-channel SOI-FET (doped with a doping concentration N D ≈ 1 × 1018 cm−3), with a design in which P-donors can experience enhanced dielectric confinement effect. b Schematic depiction of channel potential with some P-donors having deeper ground state energy level. Such donors will be observed in tunneling transport at higher temperatures. c Temperature dependence of I D-V G characteristics (V D = 5 mV), showing a SET current peak emerging at the highest temperature of ~100 K [31]