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Erratum to: Optical properties and bandgap evolution of ALD HfSiOxfilms
Nanoscale Research Letters volume 10, Article number: 378 (2015)
The authors of Nanoscale Research Letters 2015, 10:32 (DOI 10.1186/s11671-014-0724-z)  omitted to acknowledge that all ellipsometric data discussed in the article, including those displayed in Figure 1, were recorded in the laboratory of the Semiconductor Physics Group, Institut für Experimentelle Physik, Universitāt Leipzig, with the active involvement and under the guidance of Tammo Böntgen, Rüdiger Schmidt-Grund, and Marius Grundmann.
Yang W, Fronk M, Geng Y, Chen L, Sun QQ, Gordan OD, et al. Optical properties and bandgap evolution of ALD HfSiOxfilms. Nanoscale Res Lett. 2015;10:32.
The online version of the original article can be found under doi:10.1186/s11671-014-0724-z.
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Yang, W., Fronk, M., Geng, Y. et al. Erratum to: Optical properties and bandgap evolution of ALD HfSiOxfilms. Nanoscale Res Lett 10, 378 (2015). https://doi.org/10.1186/s11671-015-1079-9