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Erratum to: Optical properties and bandgap evolution of ALD HfSiOxfilms
Nanoscale Research Letters volume 10, Article number: 378 (2015)
The original article was published in Nanoscale Research Letters 2015 10:32
The authors of Nanoscale Research Letters 2015, 10:32 (DOI 10.1186/s11671-014-0724-z)  omitted to acknowledge that all ellipsometric data discussed in the article, including those displayed in Figure 1, were recorded in the laboratory of the Semiconductor Physics Group, Institut für Experimentelle Physik, Universitāt Leipzig, with the active involvement and under the guidance of Tammo Böntgen, Rüdiger Schmidt-Grund, and Marius Grundmann.
Yang W, Fronk M, Geng Y, Chen L, Sun QQ, Gordan OD, et al. Optical properties and bandgap evolution of ALD HfSiOxfilms. Nanoscale Res Lett. 2015;10:32.
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Yang, W., Fronk, M., Geng, Y. et al. Erratum to: Optical properties and bandgap evolution of ALD HfSiOxfilms. Nanoscale Res Lett 10, 378 (2015) doi:10.1186/s11671-015-1079-9