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  • Erratum
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Erratum to: Optical properties and bandgap evolution of ALD HfSiOxfilms

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Nanoscale Research Letters201510:378

  • Received: 3 September 2015
  • Accepted: 16 September 2015
  • Published:

The original article was published in Nanoscale Research Letters 2015 10:32

The authors of Nanoscale Research Letters 2015, 10:32 (DOI 10.1186/s11671-014-0724-z) [1] omitted to acknowledge that all ellipsometric data discussed in the article, including those displayed in Figure 1, were recorded in the laboratory of the Semiconductor Physics Group, Institut für Experimentelle Physik, Universitāt Leipzig, with the active involvement and under the guidance of Tammo Böntgen, Rüdiger Schmidt-Grund, and Marius Grundmann.



Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (, which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Authors’ Affiliations

Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, No. 220 Handan Road, Shanghai, 200433, China
Semiconductor Physics, Technische Universität Chemnitz, Reichenhainer Straße 70, Chemnitz, D-09107, Germany


  1. Yang W, Fronk M, Geng Y, Chen L, Sun QQ, Gordan OD, et al. Optical properties and bandgap evolution of ALD HfSiOxfilms. Nanoscale Res Lett. 2015;10:32.View ArticleGoogle Scholar


© Yang et al. 2015