Fig. 2

SEM, EDS, and TEM results. a, b The SEM images of Pt NP-modified silicon tip apex. c The corresponding EDS analysis of b. d The TEM image of Pt NPs grown on planar Si using fluoride-assisted galvanic replacement reaction. The electrolyte for Pt deposition is composed of 0.01 M of H₂PtCl₆ and 16 % (v/v) buffered oxide etchant (BOE). The duration of deposition for the silicon tip is 30 s; for the planar silicon, it is 300 s