Fig. 10
From: Conductance Quantization in Resistive Random Access Memory
Typical forming, SET, and RESET characteristics of fresh RRAM devices with different initial resistance states. a Switching process illustration of Nb/ZnO/Pt device with an initial high resistance state [170]. Higher voltage in forming is needed compared to that in the SET process. b Switching process illustration of a free-forming p+Si/NiSi2/SiO2/CeOx/W device [179]. The Forming process and the SET process show no obvious difference. c Schematic illustration of Ag2S-based QCAS device and switching behavior between OFF- and ON-state [169]. The initial state of the device is ON-state and a RESET process is needed to start the switching cycles. Reproduced with permission