Fig. 12
From: Conductance Quantization in Resistive Random Access Memory
Quantized conductance observed in Ag/Ta2O5/Pt-structured ECM devices under voltage pulse operation mode [181]. a The value of conductance increases at steps of integer multiples of conductance quantum G 0 in the SET process under positive pulses with a width of 20 ms at an interval of 2 s. In order to prevent hard breakdown of RRAM device, a current-limiting resistor of 3 kΩ was connected in series with the device. b Quantized conductance decrease phenomenon observed in the RESET process under reversed voltage polarity. No current-limiting resistor is needed in the negative pulse stimuli mode. Reproduced with permission