Fig. 2
From: Conductance Quantization in Resistive Random Access Memory
Conductance quantization phenomenon measured in the RESET process of a Pt/HfO2/Pt unipolar RRAM device. a I − V curves in four RESET cycles. b G − V curves corresponding to (a). G is defined as I/V. The RESET transients of the device show discrete states with half-integer multiples of the conductance quantum. The red lines in (a) and (b) are “guides to the eye” and correspond to I = nG 0 V or G = nG 0 with n = 1, 1.5, 2, 2.5, 3, 4, 7, and 10. Discrete conductance levels at about 1 G 0, 1.5 G 0, 2 G 0, 2.5 G 0, 3 G 0, 4 G 0, etc. are evident. c Evolution of CF conductance in the last stage of 100 successive RESET switching cycles of the Pt/HfO2/Pt device. Discrete conductance levels at 1 G 0, 2 G 0, 3 G 0, 4 G 0, etc. are revealed. d Histogram of normalized conductance collected at the step-like gradual RESET phase in 100 successive RESET cycles. Conductance peaks at integer and semi-integer multiples of G 0 are clearly present